Mark A. Zurbuchen

AREA OF EXPERTISE

GOALS

EDUCATION

WORK HISTORY

TEACHING EXPERIENCE

LEADERSHIP & SERVICE

AWARDS

LANGUAGES

RECENT COLLABORATORS

PUBLICATIONS

  1. Proceedings of the 2000 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, July 21 - August 2, 2000, Ed. S. K. Streiffer, B. J. Gibbons, and T. Tsurumi, Asst. Ed. M. A. Zurbuchen, IEEE, Piscataway, NJ, 2001.

  1. J. G. Ma, M. E. Curtis, M. A. Zurbuchen, J. C. Keay, B. B. Weng, D. H. Li, F. h. Zhao, M. B. Johnson, and Z. Shi, "Growth mechanism of cuboid growth pits in lead selenide epilayers grown by molecular beam epitaxy," J. Phys. D. Ð Appl. Phys. 43, 455411 (2010).
  2. D. G. Cahill, A. Melville, D. G. Schlom, and M. A. Zurbuchen, "Low thermal conductivity of CsBiNb2O7 epitaxial layers," Appl. Phys. Lett. 96, 121903 (2010).
  3. M. A. Zurbuchen, V. O. Sherman, A. K. Tagantsev, J. Schubert, M. E. Hawley, D. D. Fong, S. K. Streiffer, Y. Jia, W. Tian, and D. G. Schlom, "Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24," J. Appl. Phys. 107, 024106 (2009).
  4. A. Chernatynskiy, R. W. Grimes, M. A. Zurbuchen, D. R. Clarke, S. R. Phillpot, "Cross-over in Thermal Transport Properties of Natural, Perovskite-structured Superlattices," Appl. Phys. Lett. 95, 161906 (2009).
  5. D. G. Schlom, L-Q. Chen, X. Pan, A. Schmehl, and M. A. Zurbuchen, ÒREVIEW: A Thin Film Approach to Engineering Functionality into Oxides,Ó J. Amer. Ceram. Soc. 91, 2429 (2008).
  6. M. A. Zurbuchen, R. S. Freitas, M. J. Wilson, P. Schiffer, M. Roeckerath, J. Schubert, G. H. Mehta, D. J. Comstock, J. H. Lee, Y. Jia, and D. G. Schlom, ÒSynthesis and Characterization of an n = 6 Aurivillius Phase Incorporating Magnetically Active Manganese, Bi7(Mn,Ti)6O21Appl. Phys. Lett. 91, 033113 (2007).
  7. M. A. Zurbuchen, W. Tian, X.Q. Pan, D. Fong, S.K. Streiffer, M.E. Hawley, J. Lettieri, Y. Jia, G. Asayama, S.J. Fulk, D.J. Comstock, S. Knapp, A.H. Carim, and D.G. Schlom, "REVIEW: Morphology, structure, and nucleation of out-of-phase boundaries (OPBs) in epitaxial films of layered oxides," J. Mater. Res. 22, 1439-1471 (2007).
  8. W. Tian, J. H. Haeni, D. G. Schlom, E. Hutchinson, B. L. Sheu, M. M. Rosario, P. Schiffer, Y. Liu, M. A. Zurbuchen, and X. Q. Pan, ÒEpitaxial growth and magnetic properties of the first five members of the layered Srn+1RunO3n+1 oxide series,Ó Appl. Phys. Lett. 90, 022507 (2007).
  9. T. Wu, M. A. Zurbuchen, S. Saha, R-V. Wang, S. K. Streiffer, and J. F. Mitchell, ÒObservation of Magnetoelectric Effect in Epitaxial Ferroelectric Film/manganite Crystal Heterostructures,Ó Phys. Rev. B 73, 134416 (2006).
  10. Chian Liu, R. Conley, A. T. Macrander, J. Maser, H. C. Kang, M. A. Zurbuchen, and G. B. Stephenson, ÒThe Growth of Depth-Graded Multilayers for Linear Zone-Plate Applications,Ó J. Appl. Phys. 98, 113519 (2005).
  11. M. A. Zurbuchen, S. Saha, T. Wu, J. Mitchell, and S. K. Streiffer, ÒMultiferroic composite ferroelectric-ferromagnetic films,Ó Appl. Phys. Lett. 87, 232908 (2005).
  12. Y. L. Li, L. Q. Chen, G. Asayama, D. G. Schlom, M. A. Zurbuchen*, and S. K. Streiffer, ÒFerroelectric domain structures of SrBi2Nb2O9 epitaxial thin films by phase field simulation and by experiment,Ó J. Appl. Phys. 95, 6332 (2004). (* equal authorship)
  13. M. A. Zurbuchen, Yunfa Jia, Stacy Knapp, Altaf H. Carim, Darrell G. Schlom, and X. Q. Pan, ÒDefect generation by preferred nucleation in epitaxial Sr2RuO4 / LaAlO3 Appl. Phys. Lett. 83, 3891 (2003).
  14. M. A. Zurbuchen, J. Lettieri, S. J. Fulk, Y. Jia, A. H. Carim, D. G. Schlom, and S. K. Streiffer, ÒBismuth volatility effects on the perfection of SrBi2Nb2O9 and SrBi2Ta2O9 films,Ó Appl. Phys. Lett. 82, 4711 (2003).
  15. S. Sambasivan, I. Kim, S. Barnett, M. A. Zurbuchen, J. Rechner, J. Ji, B. W. Kang, A. Goyal, P. A. Barnes, and C. E. Oberly, ÒA new approach to depositing yttria-stabilized zirconia (YSZ) buffer layers for coated conductors,Ó J. Mater. Res. 18, 919 (2003).
  16. M. A. Zurbuchen, G. Asayama, D. G. Schlom, and S. K. Streiffer, ÒFerroelectric domain structure of SrBi2Nb2O9 epitaxial thin films,Ó Phys. Rev. Lett. 88, 107601 (2002).
  17. G. Asayama, J. Lettieri, M. A. Zurbuchen, Y. Jia, S. Trolier-McKinstry, D. G. Schlom, S. K. Streiffer, and J.-P. Maria, ÒGrowth of (103) fiber-textured SrBi2Nb2O9 thin films on Pt-coated silicon substrates,Ó Appl. Phys. Lett. 80, 2371 (2002).
  18. M. A. Zurbuchen, D. G. Schlom, and S. K. Streiffer, ÒComment on ÔHigh-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin filmsÕ [Appl. Phys. Lett. 78, 973 (2001)],Ó Appl. Phys. Lett. 79, 887 (2001).
  19. M. A. Zurbuchen, Y. Jia, S. Knapp, A. H. Carim, D. G. Schlom, L.-N. Zou, and Y. Liu, ÒSuppression of superconductivity by crystallographic defects in epitaxial Sr2RuO4 films,Ó Appl. Phys. Lett. 78 2351 (2001).
  20. M. A. Zurbuchen, J. Lettieri, S. K. Streiffer, Y. Jia, M. E. Hawley, X. Q. Pan, A. H. Carim, and D. G. Schlom, ÒMicrostructure and electrical properties of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 films,Ó Integr. Ferroelectr. 33, 27 (2001).
  21. M. A. Zurbuchen, J. Lettieri, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, ÒTransmission electron microscopy study of (103)-oriented epitaxial SrBi2Nb2O9 films grown on (111) SrTiO3 and (111) SrRuO3 / (111) SrTiO3J. Mater. Res. 16, 489 (2001).
  22. J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, ÒEpitaxial growth of SrBi2Nb2O9 on (110) SrTiO3 and the establishment of a lower bound on the spontaneous polarization of SrBi2Nb2O9 Appl. Phys. Lett. 77, 3090 (2000).
  23. J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, ÒEpitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3Appl. Phys. Lett. 76, 2937 (2000).
  24. Y. Jia, M. A. Zurbuchen, S. Wozniak, A. H. Carim, D. G. Schlom, L.-N. Zou, S. Briczinski, and Y. Liu, ÒEpitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure,Ó Appl. Phys. Lett. 74, 3830 (1999).
  25. M. A. Zurbuchen and A. H. Carim, ÒStrength and microstructure of brazed alumina-silicon carbide ceramic-matrix composites,Ó J. Am. Ceram. Soc. 82, 705 (1999).
  26. R. W. Messler, Jr., M. A Zurbuchen, T. T. Orling, ÒWelding with self-propagating high-temperature synthesis,Ó Welding J., 37-41 (1995).

  1. M. A. Zurbuchen and D. G. Schlom, ÒTopotactic Anion Exchange Ð A Route to Epitaxial Oxide Integration,Ó in: Theory and Applications of Ferroelectric and Multiferroic Materials: MRS Proceedings, edited by C. Ahn, P. Ghosez, M. Kawasaki, D. G. Schlom, and J.-M. Triscone, Vol. 1110E (Materials Research Society, Warrendale, 2008), pp. C10-9.1 Ð C10-9.6.
  2. M. A. Zurbuchen, J. Lettieri, Y. Jia, A. H. Carim, S. K. Streiffer, and D. G. Schlom, ÒOut-of-phase Boundary (OPB) Nucleation in Layered Oxides,Ó in: Ferroelectric Thin Films XIII: MRS Proceedings, edited by R. Ramesh, J.-P. Maria, M. Alexe, and V. Joshi, Vol. 902E (Materials Research Society, Warrendale, 2007), pp. T10-55.1 Ð T10-55.6.
  3. M. A. Zurbuchen, S. Sambasivan, S. Barnett, B. F. Kang, A. Goyal, P. A. Barnes, and C. E. Oberly, ÒAn Economical Route for Production of High-Quality YSZ Buffer Layers using the ECONO Process,Ó in Progress in High-Temperature Superconductors, edited by Greg Geiger, American Ceramic Society, Westerville, OH, 2004.
  4. J. Lettieri, M. A. Zurbuchen, G. W. Brown, Y. Jia, W. Tian, X. Q. Pan, M. E. Hawley, and D. G. Schlom, ÒInvestigation of Growth Evolution in cÐaxis SrBi2Nb2O9 epitaxial thin films,Ó in: Multicomponent Oxide Films for Electronics: MRS Proceedings v 574, 31-36, edited by M. E. Hawley, D. H. A. Blank, C. B. Eom, D. G. Schlom, and S. K. Streiffer, Materials Research Society, Pittsburgh, PA, 1999.
  5. D. G. Schlom, Y. Jia, L.-N. Zou, J. H. Haeni, S. Briczinski, M. A. Zurbuchen, C. W. Leitz, S. Madhavan, S. Wozniak, Y. Liu, M. E. Hawley, G. W. Brown, A. Dabkowski, H. A. Dabkowska, R. Uecker, and P. Reiche, ÒSearching for Superconductivity in Epitaxial Films of Copper-free Layered Oxides with the K2NiF4 Structure,Ó Superconducting and Related Oxides: Physics and Nanoengineering III, p 226, Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, 1998.
  6. M. A. Zurbuchen and A. H. Carim, ÒMicrostructure in Brazed Joints of Al2O3 / SiCw Composites,Ó in Proceedings of the Symposium on Joining of Advanced Ceramics, American Ceramic Society, Westerville, OH, 1996.

  1. US Patent 7,713,640, M. A. Zurbuchen, May 11, 2010.
  2. US Patent 7,507,145, M. A. Zurbuchen, (assignee: Aerospace Corp.).
  3. US Patent 7,208,044, M. A. Zurbuchen, April 24, 2007.
  4. US Patent Application 12/759,327, M. A. Zurbuchen.
  5. US Patent Application 7,732,067, M. A. Zurbuchen, June 8, 2010.
  6. US Patent Application 10/997,014, M. A. Zurbuchen, allowed case, divisionals in application
  7. International WIPO WO/2006/057826, M. A. Zurbuchen, EU phase (2009). 1 method patent & 3 device patents.
  8. US Patent Application in digital archiving, M. A. Zurbuchen and C. T. Hoskinson, under review (assignee: Aerospace Corp.).